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The FS100R12KT4GB11BOSA1 is a six-pack IGBT module utilizing Trenchstop IGBT4 technology and Emitter Controlled 4 diodes. It features a PressFIT connection within an EconoPACK3 housing. The collector-emitter voltage (VCES) is rated at 1200 V, with a continuous DC collector current (IC nom) of 100 A at 95°C case temperature. Total power dissipation reaches 515 W at 25°C. The module includes an integrated NTC thermistor with a nominal resistance of 5 kΩ at 25°C. Maximum junction temperature under switching conditions ranges from -40°C to 150°C.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm that the specific B11 suffix matches the required PressFIT configuration. Ensure compliance with RoHS directives as indicated in official documentation before finalizing procurement orders.
Evaluate thermal management requirements against the specified junction-to-case thermal resistance values. Verify gate drive compatibility with the recommended ±15 V operating range. Assess short-circuit withstand capability based on the maximum allowable duration and peak current limits provided in the datasheet.
This component belongs to the Infineon EconoPACK3 series designed for high-power industrial applications. It represents the Trenchstop IGBT4 generation, offering improved efficiency compared to previous iterations. The module integrates both switching and freewheeling elements into a single compact unit.
Direct substitutes include the FP100R12KT4 and FS100R12KE3. Verify pinout compatibility and thermal characteristics when considering these alternatives for existing designs.