FS100R12N2T4BDLA1

$101.37

Description：FS100R12 - IGBT MODULE
Series：*

SKU:c9412bb52da0 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：FS100R12 - IGBT MODULE
Series：*
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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FS100R12N2T4BDLA1

Overview

The FS100R12N2T4BDLA1 is a six-pack IGBT module utilizing Trench/Fieldstop IGBT4 technology. It features a maximum collector-emitter voltage of 1200 V and a continuous DC collector current of 100 A at TH = 50°C. The repetitive peak collector current reaches 200 A for 1 ms pulses. Typical saturation voltages are 1.75 V at 25°C, 2.05 V at 125°C, and 2.10 V at 150°C. The integrated diode exhibits a typical forward voltage of 1.70 V at 25°C. Thermal resistance from junction to heatsink is 0.470 K/W per IGBT and 0.624 K/W per diode. The module includes an NTC thermistor with a rated resistance of 5.00 kΩ at 25°C.

Feature Summary

Incorporates pre-applied thermal interface material for simplified assembly
Features low thermal impedance Al2O3 DCB substrate
Includes integrated NTC temperature sensor
Provides high power and thermal cycling capability

Applications

Servo drives
Motor drives
Auxiliary inverters

Procurement Notes

Verify the specific ordering suffix BDLA1 against official Infineon documentation to confirm exact manufacturing specifications. Confirm RoHS compliance status and check for any obsolete or not recommended for new design (NRND) notices before procurement. Ensure compatibility with existing cooling systems given the specified thermal resistance values.

Selection Notes

Select this component for applications requiring robust industrial-grade switching performance. Consider the positive temperature coefficient of VCEsat for safe paralleling. Evaluate gate drive requirements based on the internal gate resistor and charge characteristics. Verify that the operating junction temperature range of -40°C to 150°C meets system environmental constraints.

Part Context

This part belongs to the EconoPACK™2 series, designed for compact power electronics. It integrates Trench/Fieldstop IGBT4 technology with Emitter Controlled 4 diodes. The module is engineered for industrial quality standards, offering a balance of low conduction losses and high reliability in medium-power conversion systems.