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Product Detailed Parameters
- Description：FS100R12 - IGBT MODULE
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FS100R12N2T4BPSA1 is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled 4 diode. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 100 A at TC = 95°C. The repetitive peak collector current (ICRM) reaches 200 A for 1 ms pulses. Key electrical parameters include a typical VCEsat of 1.75 V at Tvj = 25°C and a forward voltage (VF) of 1.70 V for the diode. The module incorporates an integrated NTC temperature sensor with a rated resistance of 5.0 kΩ at 25°C.
Feature Summary
- Integrates Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technologies for optimized switching performance.
- Features an Al2O3 substrate providing low thermal resistance and high power cycling capability.
- Includes an integrated NTC temperature sensor for precise junction temperature monitoring.
- Utilizes a copper base plate to enhance thermal dissipation and mechanical stability.
Applications
- Auxiliary inverters
- Motor drives
- Servo drives
Procurement Notes
Verify the specific ordering suffix BPSA1 against official documentation to confirm exact configuration details. Ensure compatibility with standard mounting torque specifications of 3.0 to 6.0 Nm for M5 screws. Confirm RoHS compliance status through the manufacturer's latest product data sheets before finalizing procurement orders.
Selection Notes
Select this module for applications requiring robust thermal cycling endurance and low saturation voltage. Evaluate the maximum operating junction temperature limit of 150°C against system cooling requirements. Consider the internal gate resistance of 7.5 Ω when designing drive circuits to manage switching speeds and minimize electromagnetic interference during operation.
Part Context
This component belongs to the EconoPACK™2 series, designed for industrial power electronics. It represents the T4 generation of IGBT modules, balancing efficiency and ruggedness. The part number indicates its classification within Infineon's broad portfolio of silicon-based power semiconductor devices intended for medium-power inverter applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference guides or application notes for potential alternatives that match the required voltage, current, and package dimensions.
