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FS10ASJ-3-T13#C01 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FS10ASJ-3-T13#C01
- Description：MOSFET N-CH
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FS10ASJ-3-T13#C01
FET, MOSFET Arrays Overview
The FS10ASJ-3-T13#C01 is a high-speed switching N-channel MOSFET array manufactured by Renesas Electronics Corporation. This component features a drain-source voltage (VDSS) rating of 150 V and supports a continuous drain current (ID) of 10 A. The device exhibits a maximum on-resistance (rDS(ON)) of 160 mΩ at a drive voltage of 4 V. It integrates a fast recovery diode with a typical reverse recovery time of 90 ns, designed for efficient power management in demanding electronic applications.
FET, MOSFET Arrays Feature Summary
- High-speed switching capability optimized for rapid signal transitions
- Integrated fast recovery diode to enhance circuit efficiency
- Low on-resistance for reduced power loss during conduction
FET, MOSFET Arrays Applications
- Power supply circuits requiring high-efficiency switching
- Motor control systems utilizing N-channel MOSFET arrays
- Industrial automation equipment needing robust power management
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix #C01 against official Renesas documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with existing PCB footprints and thermal management requirements before integration. Cross-reference the datasheet for absolute maximum ratings to prevent operational failure under peak load conditions.
FET, MOSFET Arrays Selection Notes
Select this component when a 150 V N-channel MOSFET array with integrated fast recovery diodes is required. The 160 mΩ rDS(ON) specification suits applications prioritizing low conduction losses. Consider the 4 V drive voltage requirement for logic-level interface compatibility within the target system design constraints.
FET, MOSFET Arrays Part Context
This part belongs to the FS10ASJ series of N-channel MOSFET arrays from Renesas Electronics. It is designed for general-purpose power switching applications where high speed and reliability are critical. The array configuration allows for compact implementation in multi-phase or bridge circuits.
FET, MOSFET Arrays Replacement Considerations
Consult official Renesas cross-reference guides for verified substitutes. Ensure any replacement matches the 150 V VDSS, 10 A ID, and 160 mΩ rDS(ON) parameters. Verify pinout compatibility and thermal characteristics to maintain system integrity.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
