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The FS150R12KT4BOSA1 is a six-pack IGBT module utilizing Trench/Fieldstop IGBT4 technology and emitter-controlled diodes. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 150 A at 90°C case temperature. The saturation voltage is typically 1.75 V at 25°C, with a total power dissipation of 750 W. The module operates within a junction temperature range of -40°C to 150°C and includes an integrated NTC thermistor for thermal monitoring.
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm exact manufacturing lot details and compliance status. Ensure that the procurement channel provides valid traceability records matching the component's technical data sheet specifications.
Select this module for applications requiring high power density and robust short-circuit withstand capability up to 600 A. Evaluate the thermal resistance values to ensure adequate heatsinking for the specified 750 W power dissipation limit under intended operating conditions.
This component belongs to the EconoPACK3 series from Infineon Technologies. It represents part of the TRENCHSTOP IGBT4 product family, designed to combine low conduction losses with fast switching characteristics suitable for industrial power electronics.
Consult official Infineon cross-reference guides for verified substitutes. Do not assume functional equivalence with other 1200V modules without verifying pinout compatibility and thermal parameters.
The maximum repetitive peak collector current (ICRM) is 300 A for a pulse duration of 1 ms.
Yes, the module supports short-circuit operation with a withstand current of 600 A for up to 10 µs at a junction temperature of 150°C.
The typical gate charge (QG) is 1.25 µC when measured between -15 V and +15 V.