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The FS150R12N3T4PB81BPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT4 series. It features a six-pack configuration housed in an EconoPACK PressFIT package. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 150 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.75 V and a gate-emitter leakage current of 100 nA. The module operates within a temperature range of -40°C to +150°C and has a power dissipation rating of 680 W.
Verify the specific ordering suffix against official Infineon documentation to confirm mechanical and electrical compatibility. Ensure that the PressFIT termination style matches the target PCB design requirements. Confirm RoHS compliance status through the manufacturer's certificate before integration into regulated assemblies.
Select this component when a 1.2 kV rating and 150 A current capacity are required in a compact form factor. The PressFIT interface offers advantages for high-volume manufacturing assembly processes compared to screw-mounted alternatives. Evaluate thermal management solutions based on the 680 W power dissipation specification under expected operating conditions.
This part belongs to the FS150R12 family of IGBT modules, which share common voltage and current ratings but differ in packaging and terminal styles. The N3T4 designation indicates specific internal chip generation and packaging type within the Trenchstop IGBT4 product line. It serves as a discrete solution for medium-power industrial and renewable energy conversion applications.
Direct substitutes may include other Infineon FS150R12 variants with compatible voltage and current ratings, such as those in the KT4 or OE4 series, provided the mechanical mounting interface and pinout are verified. Cross-referencing datasheets is essential to ensure equivalent thermal and electrical characteristics.