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The FS150R17N3E4B11BOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT4 - E4 series. It features a 6-Pack configuration housed in an EconoPACK PressFIT package with screw mount installation. The device supports a maximum collector-emitter voltage of 1.7 kV and delivers a continuous collector current of 150 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.95 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 835 W. The unit operates within a temperature range of -40°C to +150°C, with a maximum gate-emitter voltage of 20 V.
Verify the specific ordering suffix against official datasheets to confirm terminal type and packaging variations. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure the procurement channel provides valid traceability documentation for quality assurance purposes.
Select this component for applications requiring high voltage blocking capability and moderate current handling in compact modules. Compare the 1.95 V saturation voltage against system efficiency targets. Verify that the PCB or busbar design accommodates the EconoPACK footprint and mounting requirements.
This part belongs to the FS150R17 family of high-voltage IGBT modules. It shares technical similarities with variants like FS150R17PE4 but differs in specific packaging and termination configurations. The E4 designation indicates the use of Trenchstop IGBT4 technology, offering improvements over previous generations.
FS150R17PE4
The maximum operating junction temperature is +150°C.
Yes, the module includes an integrated NTC thermistor for thermal monitoring.
The gate-emitter leakage current is specified as 100 nA.