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Product Detailed Parameters
- Description：MODULE IGBT HYBRID PK
- Series：HybridPACK™1
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 200A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-HYBRID1-1
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：250 A
- Power - Max：790 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：13 nF @ 25 V
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Overview
The FS200R07A1E3BOMA1 is a HybridPACK 1 IGBT module featuring Trench/Fieldstop IGBT3 technology and an Emitter Controlled 3 diode. It has a collector-emitter voltage (VCES) of 650 V, a nominal continuous DC collector current (IC nom) of 200 A at TC=65°C, and a repetitive peak collector current (ICRM) of 400 A. The typical saturation voltage (VCEsat) is 1.45 V at Tvj=25°C. Total power dissipation (Ptot) is 790 W at TC=25°C. Operating junction temperature ranges from -40°C to +150°C. It includes an integrated NTC thermistor with a rated resistance (R25) of 5 kΩ.
Feature Summary
- Trench/Fieldstop IGBT3 technology for low switching losses
- Emitter Controlled 3 diode with positive temperature coefficient
- Integrated NTC temperature sensor for thermal monitoring
- Al2O3 substrate with copper base plate for low thermal resistance
Applications
- Automotive applications
- Hybrid Electrical Vehicles (HEV)
- Commercial Agriculture Vehicles
- Motor Drives
Procurement Notes
Verify the specific ordering suffix BOMA1 against official Infineon documentation to confirm exact material and packaging specifications. Ensure compatibility with standard mounting torque requirements of 3.0 to 6.0 Nm for M5 screws. Confirm RoHS compliance status through the manufacturer's latest datasheet revision before procurement.
Selection Notes
Select this module for inverter applications requiring 650 V blocking capability and up to 200 A continuous current. Consider the 0.19 K/W junction-to-case thermal resistance for heatsink design. Verify gate drive requirements match the specified internal gate resistor and threshold voltages. Ensure operating temperatures remain within the -40°C to +150°C range.
Part Context
This component belongs to the Infineon HybridPACK 1 series, utilizing Trench/Fieldstop IGBT3 technology. It is designed for high-power density applications in automotive and industrial sectors. The module integrates both IGBT and diode chips on a single Al2O3 substrate with a copper base plate for efficient heat dissipation.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure replacement modules maintain equivalent voltage ratings, current capabilities, and package dimensions. Verify thermal characteristics and pinout compatibility before implementation.
