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The FS200R12KT4RB11BOSA1 is a Trenchstop IGBT4 EconoPACK3 module featuring emitter-controlled diodes. It provides a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 200 A at a case temperature of 95°C, with a repetitive peak current capability of 400 A. The device utilizes PressFIT contact technology and includes an integrated NTC thermistor for thermal monitoring. Key electrical parameters include a typical saturation voltage of 1.75 V at 25°C and a maximum operating junction temperature of 150°C.
Verify the specific ordering suffix B11 against official Infineon documentation to confirm the inclusion of PressFIT contacts and NTC integration. Ensure that the procurement channel sources the component directly from authorized distributors or the manufacturer to guarantee authenticity and compliance with industrial qualification standards.
Select this module for applications requiring high power density and robust mechanical mounting via PressFIT technology. Consider the 150°C maximum operating junction temperature and the 200 A continuous current rating when designing thermal management systems. Verify compatibility with standard gate drive voltages and ensure the PCB layout accommodates the specific pin configuration of the EconoPACK3 housing.
This component belongs to the Infineon Trenchstop IGBT4 series within the EconoPACK3 package family. It represents a silicon-based power module designed for industrial applications, offering a balance between low conduction losses and fast switching capabilities compared to previous generation technologies.
FS200R12KT4R_B11