FS225R12KE3BOSA1

FS225R12KE3BOSA1

$344.17
  • Description:IGBT MOD 1200V 325A 1150W
  • Series:EconoPACK™+

SKU:ea412da94310 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MOD 1200V 325A 1150W
  • Series:EconoPACK™+
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Full Bridge
  • Vce(on) (Max) @ Vge, Ic:2.15V @15V, 225A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):325 A
  • Power - Max:1150 W
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:16 nF @ 25 V

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FS225R12KE3BOSA1

Overview

The FS225R12KE3BOSA1 is a six-pack IGBT module utilizing Trench/Fieldstop IGBT3 technology and an Emitter-Controlled High Efficiency diode. It features a collector-emitter voltage of 1200 V, with continuous DC collector currents rated at 225 A (TC=80°C) and 325 A (TC=25°C). The module operates within a junction temperature range of -40°C to 125°C. Key electrical parameters include a saturation voltage of 1.70 V to 2.15 V, gate charge of 2.10 µC, and total power dissipation of 1150 W. Thermal resistance from junction to case is 0.11 K/W for the IGBT and 0.19 K/W for the diode.

Feature Summary

  • Integrates Trench/Fieldstop IGBT3 technology with emitter-controlled high-efficiency diodes for optimized switching performance.
  • Includes an integrated NTC thermistor with a nominal resistance of 5.00 kΩ at 25°C for reliable thermal monitoring.
  • Provides basic insulation via Al2O3 substrate with a creepage distance of 14.5 mm and clearance of 10.0 mm.

Applications

  • Three-phase inverter circuits
  • Industrial motor drives
  • Medium-power frequency converters

Procurement Notes

Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm component specifications. Confirm RoHS compliance status through the manufacturer's certificate. Ensure that the procurement channel provides valid traceability data for this industrial-grade silicon module.

Selection Notes

Select this module based on its 1200 V rating and 225 A continuous current capability under standard thermal conditions. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended duty cycle. Consider the internal gate resistor value when designing the gate drive circuitry for optimal switching speed control.

Part Context

This component belongs to the EconoPACK+ series manufactured by Infineon Technologies. It utilizes Trenchstop IGBT3 technology combined with high-efficiency diodes. The module is designed for robust industrial applications requiring high power density and reliable thermal management within a screw-mount package.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs before considering alternative components.

FAQ

What is the maximum repetitive peak collector current?

The maximum repetitive peak collector current is 450 A for a pulse duration of 1 ms.

What is the isolation test voltage of the module?

The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.

What is the typical forward voltage of the integrated diode?

The typical forward voltage is 1.65 V at a forward current of 225 A and a junction temperature of 25°C.

FS225R12KE3BOSA1FS225R12KE3BOSA1
$344.17
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