SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS225R12KE3BOSA1 is a six-pack IGBT module utilizing Trench/Fieldstop IGBT3 technology and an Emitter-Controlled High Efficiency diode. It features a collector-emitter voltage of 1200 V, with continuous DC collector currents rated at 225 A (TC=80°C) and 325 A (TC=25°C). The module operates within a junction temperature range of -40°C to 125°C. Key electrical parameters include a saturation voltage of 1.70 V to 2.15 V, gate charge of 2.10 µC, and total power dissipation of 1150 W. Thermal resistance from junction to case is 0.11 K/W for the IGBT and 0.19 K/W for the diode.
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm component specifications. Confirm RoHS compliance status through the manufacturer's certificate. Ensure that the procurement channel provides valid traceability data for this industrial-grade silicon module.
Select this module based on its 1200 V rating and 225 A continuous current capability under standard thermal conditions. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended duty cycle. Consider the internal gate resistor value when designing the gate drive circuitry for optimal switching speed control.
This component belongs to the EconoPACK+ series manufactured by Infineon Technologies. It utilizes Trenchstop IGBT3 technology combined with high-efficiency diodes. The module is designed for robust industrial applications requiring high power density and reliable thermal management within a screw-mount package.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs before considering alternative components.
The maximum repetitive peak collector current is 450 A for a pulse duration of 1 ms.
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.
The typical forward voltage is 1.65 V at a forward current of 225 A and a junction temperature of 25°C.