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Product Detailed Parameters
- Description：IGBT MOD 1200V 40A 145W
- Series：EconoPACK™ 2
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 25A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Power - Max：145 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：1.8 nF @ 25 V
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Overview
The FS25R12KT3BOSA1 is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT3 technology and EmCon High Efficiency diodes. It features a collector-emitter voltage of 1200 V, a continuous DC collector current of 25 A at TC=80°C, and a total power dissipation of 145 W. The module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.15 V and a forward voltage of 2.15 V for the diode. Thermal resistance from junction to case is 0.86 K/W per IGBT and 1.50 K/W per diode.
Feature Summary
- Integrates fast Trench/Fieldstop IGBT3 chips with high-efficiency EmCon diodes for optimized switching performance.
- Includes an embedded NTC thermistor for precise internal temperature monitoring within the module.
- Designed in the EconoPACK™2 package to provide low stray inductance and efficient thermal management.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix BOSA1 against official documentation to confirm packaging details and RoHS compliance status. Ensure that the component matches the required technical specifications for the intended application before procurement. Cross-reference the datasheet revision number to guarantee access to the most accurate electrical and thermal characteristics.
Selection Notes
Select this module for applications requiring a six-pack configuration with moderate current ratings up to 25 A. Evaluate the thermal resistance values to ensure adequate heatsinking can maintain the junction temperature below 150°C. Consider the gate charge and switching energy losses when designing the gate drive circuitry for optimal efficiency.
Part Context
This component belongs to the FSxxR12KT3 series of IGBT modules manufactured by Infineon Technologies. It utilizes the EconoPACK™2 housing format, which is widely used in industrial power electronics. The KT3 designation indicates the use of Trench/Fieldstop generation 3 technology combined with high-efficiency diodes.
Replacement Considerations
FS25R12KT3P-E
FAQ
What is the maximum allowable junction temperature for this module?
The maximum junction temperature (Tvj max) for both the inverter and brake-chopper configurations is 150°C.
Does the module include an integrated temperature sensor?
Yes, the module contains an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C for temperature monitoring.
What is the typical forward voltage of the integrated diode?
The forward voltage (VF) of the diode is typically 1.65 V at a forward current of 25 A and a junction temperature of 25°C.
