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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS25R12W1T4_B11 is a six-pack IGBT module utilizing Trench/Fieldstop IGBT4 technology and Emitter Controlled 4 diodes. It features PressFIT connection technology and an integrated NTC thermistor within the EasyPACK package. The collector-emitter voltage (VCES) is rated at 1200 V, with a continuous DC collector current of 25 A at TC=100°C and 45 A at TC=25°C. The repetitive peak collector current reaches 50 A. Typical saturation voltage (VCEsat) is 1.85 V at Tvj=25°C. Total power dissipation is 205 W at TC=25°C. Operating junction temperature ranges from -40°C to +150°C.
Verify the exact ordering suffix against official Infineon documentation to confirm mechanical interface and terminal configuration. Ensure compatibility with existing PCB layouts or busbar designs when adopting PressFIT technology. Cross-reference the specific revision level to validate electrical parameters and thermal characteristics before finalizing component selection.
Evaluate the required gate drive voltage levels and external gate resistor values to optimize switching performance. Consider the thermal management strategy given the specified junction-to-case thermal resistance. Verify that the application's peak current demands do not exceed the 50 A repetitive peak limit under short-circuit conditions.
This component belongs to the EasyPACK family of modules designed for industrial power conversion. It integrates Trench/Fieldstop IGBT4 technology with Emitter Controlled diodes to balance switching speed and conduction losses. The module is engineered for high reliability in demanding environments.
FS25R12W1T7B11BOMA1
The module can withstand a short circuit for up to 10 µs at Tvj = 150°C.
The typical forward voltage (VF) is 1.75 V at Tvj = 25°C and IF = 25 A.
The module supports an isolation test voltage (VISOL) of 2.5 kV RMS at 50 Hz for 1 minute.