FS25R12W1T4B11BOMA1

FS25R12W1T4B11BOMA1

$29.36
  • Description:IGBT MOD 1200V 45A 205W
  • Series:EasyPACK™

SKU:ac74ca78b516 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MOD 1200V 45A 205W
  • Series:EasyPACK™
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Three Phase Inverter
  • Vce(on) (Max) @ Vge, Ic:2.25V @ 15V, 25A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):45 A
  • Power - Max:205 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:1.45 nF @ 25 V

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FS25R12W1T4B11BOMA1

Overview

The FS25R12W1T4_B11 is a six-pack IGBT module utilizing Trench/Fieldstop IGBT4 technology and Emitter Controlled 4 diodes. It features PressFIT connection technology and an integrated NTC thermistor within the EasyPACK package. The collector-emitter voltage (VCES) is rated at 1200 V, with a continuous DC collector current of 25 A at TC=100°C and 45 A at TC=25°C. The repetitive peak collector current reaches 50 A. Typical saturation voltage (VCEsat) is 1.85 V at Tvj=25°C. Total power dissipation is 205 W at TC=25°C. Operating junction temperature ranges from -40°C to +150°C.

Feature Summary

  • Low switching losses and low VCEsat for improved efficiency
  • Al2O3 substrate with low thermal resistance
  • Robust mounting due to integrated mounting clamps
  • Positive temperature coefficient of VCEsat

Applications

  • Air Conditioning
  • Motor Drives
  • Servo Drives
  • UPS Systems

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm mechanical interface and terminal configuration. Ensure compatibility with existing PCB layouts or busbar designs when adopting PressFIT technology. Cross-reference the specific revision level to validate electrical parameters and thermal characteristics before finalizing component selection.

Selection Notes

Evaluate the required gate drive voltage levels and external gate resistor values to optimize switching performance. Consider the thermal management strategy given the specified junction-to-case thermal resistance. Verify that the application's peak current demands do not exceed the 50 A repetitive peak limit under short-circuit conditions.

Part Context

This component belongs to the EasyPACK family of modules designed for industrial power conversion. It integrates Trench/Fieldstop IGBT4 technology with Emitter Controlled diodes to balance switching speed and conduction losses. The module is engineered for high reliability in demanding environments.

Replacement Considerations

FS25R12W1T7B11BOMA1

FAQ

What is the maximum short-circuit withstand time?

The module can withstand a short circuit for up to 10 µs at Tvj = 150°C.

What is the typical forward voltage of the integrated diode?

The typical forward voltage (VF) is 1.75 V at Tvj = 25°C and IF = 25 A.

What insulation test voltage does the module support?

The module supports an isolation test voltage (VISOL) of 2.5 kV RMS at 50 Hz for 1 minute.

FS25R12W1T4B11BOMA1FS25R12W1T4B11BOMA1
$29.36
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