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Product Detailed Parameters
- Description：IGBT MODULE 1200V 45A 205W EASY
- Series：EasyPACK™
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.25V @ 15V, 25A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-EASY1B-1
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：45 A
- Power - Max：205 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：-
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Overview
The FS25R12W1T4PBPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trench/Fieldstop IGBT4 series. It features a six-pack configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 25 A at 25°C. The typical saturation voltage is 1.85 V, and power dissipation reaches 205 W. Operating temperatures range from -40°C to +150°C. The component utilizes EasyPACK™ 1B packaging for screw mounting.
Feature Summary
- Integrates Trench/Fieldstop IGBT4 technology for optimized switching performance
- Provides a six-pack topology suitable for three-phase inverter applications
- Utilizes EasyPACK™ 1B housing for robust mechanical stability
Applications
- Three-phase motor drives
- Industrial inverters
- Switched-mode power supplies
Procurement Notes
Verify the exact part number against official Infineon documentation, as standard listings often reference FS25R12W1T4 or FS25R12W1T4BOMA1. Confirm that the suffix indicates the specific RoHS-compliant tape-and-reel or tray variant intended for your assembly process. Cross-reference datasheet revisions to ensure compatibility with existing thermal interface materials and gate drive requirements.
Selection Notes
Select this module when a 1200 V rating and 25 A continuous current are required within an EasyPACK™ 1B footprint. Ensure the application can accommodate the specified 205 W power dissipation through adequate heatsinking. Verify that the gate drive voltage aligns with the standard IGBT4 specifications to maintain optimal saturation voltage and switching characteristics.
Part Context
This component is part of the broader FS25R12 product family, which includes variants like FS25R12W1T7 and F3L25R12W1T4. While sharing similar electrical ratings, differences exist in technology generation (IGBT4 vs. IGBT7) and package configurations. The PBPSA1 suffix typically denotes specific manufacturing or compliance attributes distinct from the standard BOMA1 designation.
Replacement Considerations
FS25R12W1T4BOMA1
FAQ
What is the maximum junction temperature for this module?
The maximum operating junction temperature is +150°C.
Does this module include an integrated NTC thermistor?
Yes, the datasheet for the FS25R12W1T4 series indicates the presence of an NTC thermistor for temperature monitoring.
What is the typical forward voltage of the integrated diode?
The typical forward voltage (VF) at 25°C is approximately 1.75 V.
