FET, MOSFET Arrays FS33MR12W1M1HB11BPSA1 product image

FS33MR12W1M1HB11BPSA1

$76.81
  • Description:MOSFET 1200V AG-EASY1B
  • Series:CoolSiC™

SKU:562b416ecdb9 Category: Brand:

  
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FS33MR12W1M1HB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 1200V AG-EASY1B. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FS33MR12W1M1HB11BPSA1

  • Description:MOSFET 1200V AG-EASY1B
  • Series:CoolSiC™
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-EASY1B
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FS33MR12W1M1HB11BPSA1

FS33MR12W1M1HB11BPSA1

FET, MOSFET Arrays Overview

The FS33MR12W1M1HB11BPSA1 is a CoolSiC Trench MOSFET half-bridge module in the EasyPACK™ package. It features a 1200 V drain-source voltage and supports a continuous DC drain current of 25 A at 175 °C, with a repetitive peak current of 50 A. The module incorporates PressFIT contact technology for rugged mounting and includes an integrated NTC temperature sensor. Electrical characteristics include a maximum stray inductance of 18 nH and a typical on-resistance of 48 mΩ at 25 °C.

FET, MOSFET Arrays Feature Summary

  • Utilizes CoolSiC Trench MOSFET technology to achieve low switching losses and high-frequency switching capability.
  • Features PressFIT contact technology combined with integrated mounting clamps for secure mechanical connection.
  • Includes an integrated NTC thermistor for precise thermal monitoring within the module.
  • Designed with a low-inductive structure to minimize parasitic effects during operation.

FET, MOSFET Arrays Applications

  • High-frequency switching applications
  • DC/DC converters
  • Motor drives
  • UPS systems

FET, MOSFET Arrays Procurement Notes

Verify the component against the official Infineon datasheet IFX-ABE724-006 (Revision 1.20) to confirm technical specifications. Ensure that the ordering suffix matches the required configuration. Confirm compliance with industrial application standards as specified in the product validation section. Check for any specific handling requirements related to the PressFIT technology.

FET, MOSFET Arrays Selection Notes

Select this module for designs requiring high efficiency and compact size in power conversion circuits. Consider the thermal resistance and operating temperature range when designing the heat sink interface. Verify compatibility with recommended gate drivers listed by the manufacturer. Evaluate the electrical parameters against the specific load requirements of the target application.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon CoolSiC™ MOSFET G1 family, utilizing silicon carbide technology for enhanced performance. It is part of the EasyPACK™ series, which provides standardized packaging solutions for various power modules. The M1H designation indicates specific internal design characteristics within this product line.

FET, MOSFET Arrays Replacement Considerations

Consult the official datasheet or manufacturer documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other models without verifying pinout and electrical specifications.

FET, MOSFET Arrays FAQ

What is the maximum isolation test voltage for this module?

The maximum isolation test voltage is 3.0 kV RMS at 50 Hz for 1 minute.

Does the module include thermal protection components?

Yes, the module integrates an NTC thermistor for temperature sensing.

What is the typical stray inductance of the module?

The typical stray inductance is 18 nH.

FS33MR12W1M1HB11BPSA1FS33MR12W1M1HB11BPSA1
$76.81
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