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The FS33MR12W1M1HPB11BPSA1 is a half-bridge power module from Infineon Technologies, utilizing CoolSiC MOSFET technology. It features a 1200 V drain-source voltage rating and operates within a junction temperature range of -40°C to +175°C. The component belongs to the M1H series and utilizes the EasyDUAL package format for baseplate mounting. This discrete semiconductor module integrates two N-channel devices designed for high-efficiency switching applications.
Verify the exact part number suffix against official Infineon documentation, as variations such as BPSA1 or HPB11 may indicate specific manufacturing revisions or packaging differences. Confirm RoHS compliance status and datasheet revision levels prior to procurement to ensure compatibility with design requirements.
Select this module for applications requiring high switching frequencies and reduced system size due to superior thermal conductivity. Ensure gate driver capabilities match the CoolSiC switching characteristics. Verify that the cooling solution supports the specified maximum junction temperature limits under expected load conditions.
This component is part of Infineon's CoolSiC portfolio, specifically the M1H series within the EasyDUAL family. It serves as a silicon carbide alternative to traditional IGBT modules, offering lower switching losses. Similar variants include FF33MR12W1M1HB11BPSA1 and evaluation boards like EVAL-FS33MR12W1M1HM5.
Cross-reference with FF33MR12W1M1HB11BPSA1 for potential functional equivalence within the same product family. Verify pinout compatibility and thermal interface specifications before substituting any other half-bridge SiC modules.