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The FS35R12W1T4_B11 is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 35 A at TC = 100°C. The typical collector-emitter saturation voltage (VCEsat) is 1.85 V at Tvj = 25°C. Total power dissipation reaches 225 W at TC = 25°C. The module integrates an Emitter Controlled 4 diode and includes a PressFIT connection system alongside an NTC thermistor for thermal monitoring.
Verify the specific ordering suffix against official documentation to confirm mechanical interface variations. Ensure that the selected variant matches the required terminal configuration and insulation class for the target application. Cross-reference the datasheet revision date to validate the accuracy of electrical parameters before finalizing procurement specifications.
Select this component based on the 1200 V blocking capability and 35 A nominal current rating suitable for industrial inverter topologies. Consider the 25 nH stray inductance and thermal resistance values when designing the heatsink interface. Confirm compatibility with the PressFIT termination method during PCB layout and mechanical integration planning.
This module belongs to the EasyPACK series, designed for compact industrial power conversion applications. It represents the Trench/Fieldstop IGBT4 generation, offering improved controllability compared to previous iterations. The inclusion of an integrated NTC thermistor allows for precise junction temperature monitoring within the system architecture.
Public confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and thermal characteristics if considering alternative manufacturers or generations without official substitution data.