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The FS3L200R10W3S7F_B11 is an EasyPACK™ module integrating TRENCHSTOP™ IGBT7 and CoolSiC™ Schottky diodes with PressFIT technology. It features a collector-emitter voltage (VCES) of 950 V, implemented collector current (ICN) of 100 A, and repetitive peak collector current (ICRM) of 200 A. The boost diode has a repetitive peak reverse voltage (VRRM) of 1200 V and implemented forward current (IFN) of 30 A. The module includes an integrated NTC thermistor with a rated resistance (R25) of 5 kΩ.
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure compatibility with the required PCB hole pattern and mounting torque specifications before procurement. Cross-reference datasheet version 3.0 for accurate electrical parameters.
Select this module for designs requiring high power density and low thermal resistance. Verify that the system operates within the specified junction temperature range of -40°C to 150°C. Confirm that the gate drive circuitry supports the recommended ±15 V operation and internal gate resistor values.
This component belongs to the EasyPACK™ family featuring TRENCHSTOP™ IGBT7 and CoolSiC™ technologies. It is designed for compact industrial power conversion systems. The module combines advanced semiconductor materials with mechanical PressFIT connections to enhance reliability and simplify assembly processes in high-power environments.
Consult official Infineon substitution guides for verified alternatives. Ensure any replacement matches the EasyPACK™ form factor, Pin grid arrangement, and electrical ratings including VCES and ICN.
The boost diode has a maximum repetitive peak reverse voltage (VRRM) of 1200 V.
The NTC thermistor has a rated resistance (R25) of 5.00 kΩ at 25°C.
The module has an isolation test voltage (VISOL) of 3.2 kV RMS at 50 Hz for 1 minute.