FS3L25R12W2H3B11BPSA1

Overview

The FS3L25R12W2H3_B11 is a three-level IGBT module from Infineon's EasyPACK™ series, utilizing fast Trench/Fieldstop IGBT4 technology and Emitter Controlled 4 diodes. It features PressFIT connection technology and an integrated NTC thermistor. The main IGBTs (T1/T4) support a collector-emitter voltage of 1200 V with a continuous DC current of 25 A at 60°C heatsink temperature. The intermediate IGBTs (T2/T3) are rated for 650 V with a continuous DC current of 15 A at 100°C heatsink temperature. The module incorporates low-inductive design characteristics to minimize switching losses.

Feature Summary

• Integrates fast Trench/Fieldstop IGBT4 chips with Emitter Controlled 4 diodes for optimized switching performance.
• Features PressFIT contact technology combined with integrated mounting clamps for robust mechanical assembly.
• Utilizes an Al2O3 substrate with low thermal resistance to facilitate efficient heat dissipation.
• Includes an embedded NTC thermistor for precise internal temperature monitoring.

Applications

• Three-level inverter applications
• Solar power inverters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure that the required PressFIT tooling is compatible with the module specifications before procurement. Confirm compliance with relevant industrial standards and safety regulations applicable to the intended deployment environment.

Selection Notes

Select this component for designs requiring high-speed switching capabilities within a compact form factor. Evaluate the thermal management requirements based on the specified junction-to-heatsink thermal resistance values. Consider the gate drive voltage limits and short-circuit withstand times when designing the control circuitry for reliable operation.

Part Context

This module belongs to the High Speed IGBT H3 series, representing Infineon's advanced silicon power semiconductor solutions. It is part of the broader EasyPACK™ family designed for industrial and renewable energy applications. The technology focuses on reducing switching losses while maintaining high reliability under demanding electrical conditions.

Replacement Considerations

Consult official replacement guides for verified substitutes. Cross-referencing requires matching voltage ratings, current capacities, and package dimensions to ensure functional compatibility without redesigning the host system.

FAQ

What is the maximum repetitive peak collector current for the main IGBTs?

The maximum repetitive peak collector current (ICRM) for IGBTs T1 and T4 is 50 A with a pulse duration of 1 ms.

Does the module include temperature sensing capabilities?

Yes, the module integrates an NTC thermistor with a nominal resistance of 5.00 kΩ at 25°C for temperature monitoring.

What is the isolation test voltage rating?

The module has an isolation test voltage (VISOL) rating of 2.5 kV RMS at 50 Hz for one minute.