FS3L400R10W3S7FB11BPSA1

Overview

The FS3L400R10W3S7F_B11 is a three-level EasyPACK™ module integrating TRENCHSTOP™ IGBT7 and CoolSiC™ Schottky diodes. It features PressFIT contacts and an integrated NTC sensor. Key electrical parameters include a collector-emitter voltage (V_CES) of 950 V, nominal collector current (I_C nom) of 200 A, and repetitive peak current (I_CRM) of 300 A. The reverse diode has a maximum rated voltage (V_RRM) of 1200 V with continuous forward currents of 75 A and 60 A for the respective legs. The module utilizes an Al2O3 substrate, operates up to 175°C junction temperature for diodes, and includes low stray inductance of 18 nH.

Feature Summary

• Combines TRENCHSTOP™ IGBT7 technology with fifth-generation CoolSiC™ Schottky diodes for optimized switching performance.
• Utilizes PressFIT contact technology for robust mechanical connection and simplified assembly.
• Incorporates an integrated NTC thermistor for precise thermal monitoring within the module.
• Features an aluminum oxide (Al2O3) substrate designed for low thermal resistance.

Applications

• Three-level inverter topologies
• Solar power inverters
• Uninterruptible Power Supply (UPS) systems

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and qualification status. Ensure compatibility with PressFIT mounting tools and verify that the application environment meets the industrial qualification standards defined in IEC 60747, 60749, and 60068 before finalizing procurement.

Selection Notes

Select this component for designs requiring high power density and reduced switching losses in three-level configurations. Consider the 950 V rating for the IGBT and 1200 V rating for the SiC diode when determining system voltage levels. Evaluate the thermal management requirements based on the specified RthJH values and the 175°C operating limit for the diode junction.

Part Context

This module belongs to the EasyPACK™ family utilizing seventh-generation trench gate IGBT technology. It represents a hybrid solution combining silicon-based IGBTs with silicon carbide diodes to enhance efficiency. The design targets industrial applications where compact form factors and high reliability are critical for system performance.

Replacement Considerations

Direct replacements must match the 62 mm EasyPACK™ footprint and PressFIT interface. Verify that substitute components maintain equivalent voltage ratings (950 V / 1200 V) and current capabilities. Cross-reference thermal resistance and switching characteristics to ensure system stability without redesigning the gate drive or cooling infrastructure.

FAQ

What is the maximum operating junction temperature for the integrated diodes?

The diodes support a maximum operating junction temperature (Tvj op) of 175 °C, which allows for operation under overload conditions as per application note AN 2018-14.

How is the module mechanically connected to the circuit board?

The module uses PressFIT contact technology, eliminating the need for soldering. The datasheet specifies a mounting torque of 1.3 to 1.5 Nm for the module mounting screws.

What insulation isolation voltage does the module provide?

The module provides an isolation test voltage (VISOL RMS) of 3.2 kV at 50 Hz for 1 minute, utilizing an internal Al2O3 basic insulation layer.