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The FS45MR12W1M1PB11BPSA1 is a CoolSiC MOSFET half-bridge module manufactured by Infineon Technologies. It utilizes Silicon Carbide (SiC) technology and features a 1200 V voltage rating. The component belongs to the EasyDUAL PressFIT product family, designed for high-efficiency power conversion applications. Key electrical parameters include a continuous drain current of 45 A at 25°C and a maximum on-state resistance (RDS(on)) of approximately 16 mΩ. The module supports a junction temperature range from -40°C to 175°C and employs a press-fit mounting style for secure thermal and mechanical connection.
Verify the specific suffix BPSA1 against official Infineon documentation to confirm tape-and-reel packaging versus tray configuration. Ensure the revision level matches the design requirements. Cross-reference the full part number with the manufacturer's current datasheet to validate active status and RoHS compliance details before procurement.
Select this module for applications requiring low conduction losses and high-frequency switching capabilities. The 1200 V rating provides sufficient headroom for 800 V battery systems. Evaluate the thermal resistance characteristics against the system's cooling solution. Confirm that the gate drive voltage window aligns with the driver IC specifications to ensure optimal switching behavior.
This component is part of Infineon's CoolSiC G1 generation portfolio, specifically within the EasyDUAL PressFIT series. It serves as a discrete power module alternative to discrete dies, offering simplified assembly and improved parasitic performance. The M1H designation indicates the specific generation and package type within the broader CoolSiC ecosystem.
Direct pin-to-pin replacements may include other Infineon CoolSiC modules with similar current ratings and voltage classes, such as the FF45MR12W1M1PB11BPSA1 if available. Verify thermal interface material compatibility and gate drive requirements when substituting with different manufacturers' SiC modules.