FS45MR12W1M1PB11BPSA1

FS45MR12W1M1PB11BPSA1

  • Description:LOW POWER EASY AG-EASY1BM-2
  • Series:*

SKU:6fd8edcdbf0d Category: Brand:

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Product Detailed Parameters

  • Description:LOW POWER EASY AG-EASY1BM-2
  • Series:*
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:-
  • Configuration:-
  • Vce(on) (Max) @ Vge, Ic:-
  • Input:-
  • NTC Thermistor:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Power - Max:-
  • Current - Collector Cutoff (Max):-
  • Input Capacitance (Cies) @ Vce:-

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FS45MR12W1M1PB11BPSA1

Overview

The FS45MR12W1M1PB11BPSA1 is a CoolSiC MOSFET half-bridge module manufactured by Infineon Technologies. It utilizes Silicon Carbide (SiC) technology and features a 1200 V voltage rating. The component belongs to the EasyDUAL PressFIT product family, designed for high-efficiency power conversion applications. Key electrical parameters include a continuous drain current of 45 A at 25°C and a maximum on-state resistance (RDS(on)) of approximately 16 mΩ. The module supports a junction temperature range from -40°C to 175°C and employs a press-fit mounting style for secure thermal and mechanical connection.

Feature Summary

  • Utilizes CoolSiC MOSFET technology for superior switching performance compared to silicon alternatives.
  • Features an EasyDUAL form factor with integrated gate drive layout optimization.
  • Incorporates PressFIT termination technology to eliminate wire bonding and enhance reliability.
  • Designed for high thermal conductivity and robust operation in demanding environments.

Applications

  • Electric vehicle (EV) onboard chargers
  • DC-DC converters for energy storage systems
  • Industrial motor drives
  • Photovoltaic inverters

Procurement Notes

Verify the specific suffix BPSA1 against official Infineon documentation to confirm tape-and-reel packaging versus tray configuration. Ensure the revision level matches the design requirements. Cross-reference the full part number with the manufacturer's current datasheet to validate active status and RoHS compliance details before procurement.

Selection Notes

Select this module for applications requiring low conduction losses and high-frequency switching capabilities. The 1200 V rating provides sufficient headroom for 800 V battery systems. Evaluate the thermal resistance characteristics against the system's cooling solution. Confirm that the gate drive voltage window aligns with the driver IC specifications to ensure optimal switching behavior.

Part Context

This component is part of Infineon's CoolSiC G1 generation portfolio, specifically within the EasyDUAL PressFIT series. It serves as a discrete power module alternative to discrete dies, offering simplified assembly and improved parasitic performance. The M1H designation indicates the specific generation and package type within the broader CoolSiC ecosystem.

Replacement Considerations

Direct pin-to-pin replacements may include other Infineon CoolSiC modules with similar current ratings and voltage classes, such as the FF45MR12W1M1PB11BPSA1 if available. Verify thermal interface material compatibility and gate drive requirements when substituting with different manufacturers' SiC modules.

FS45MR12W1M1PB11BPSA1FS45MR12W1M1PB11BPSA1

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