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The FS50R07N2E4_B11 is a Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode module in the EconoPACK™2 package. It features PressFIT technology and an integrated NTC temperature sensor. Key electrical parameters include a collector-emitter voltage (VCES) of 650 V, a nominal continuous DC collector current (IC nom) of 50 A at TC=80°C, and a repetitive peak collector current (ICRM) of 100 A. The typical collector-emitter saturation voltage (VCE sat) is 1.70 V at Tvj=125°C. Total power dissipation (Ptot) is rated at 190 W at TC=25°C. The operating junction temperature range spans from -40°C to +150°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the part matches the exact datasheet revision and physical markings. Ensure handling procedures comply with electrostatic discharge precautions. Check for any specific application notes regarding mounting torque and thermal interface material requirements before integration.
Select this module for applications requiring 650 V blocking voltage and up to 50 A continuous current. Consider the 190 W total power dissipation rating when designing the cooling system. Verify that the switching characteristics align with the intended gate drive resistance and voltage levels. Ensure the mechanical footprint matches the PCB layout constraints.
This component belongs to the Infineon Trenchstop IGBT4 family, utilizing trench gate technology for improved switching performance. The EconoPACK™2 housing provides a compact form factor suitable for various power electronics designs. The PressFIT termination method eliminates soldering requirements for module-to-PCB connections.
Consult official Infineon documentation for qualified replacement parts. Verify compatibility of pinout, thermal resistance, and electrical ratings before substitution.