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The FS50R12KT3BOSA1 is a six-pack IGBT module from Infineon Technologies, utilizing TRENCHSTOP™ IGBT3 technology. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (IC) of 75 A at 25°C. The typical saturation voltage (VCEsat) is 1.7 V, with a power dissipation (Pd) of 280 W. The device operates within a junction temperature range of -40°C to +125°C and includes an NTC thermistor for thermal monitoring. Packaged in the EconoPACK™ 2 housing, it integrates fast recovery diodes suitable for high-efficiency switching applications.
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm pin configuration and terminal type. Ensure compatibility with existing PCB footprints and cooling requirements before procurement. Cross-reference datasheet revisions to validate electrical parameters match the intended application constraints.
Select this module for applications requiring robust 1.2 kV blocking capability and moderate current handling up to 75 A. Consider the 1.7 V saturation voltage for conduction loss calculations. Verify that the operating junction temperature remains within the specified -40°C to +125°C range under worst-case thermal conditions.
This component belongs to the FSXR12K3G series of IGBT modules. It utilizes the EconoPACK™ 2 housing format, which is designed for compact power electronics designs. The module combines silicon IGBTs with fast recovery diodes in a single insulated package for three-phase or half-bridge configurations.
Consult official Infineon substitution guides for verified alternatives. Generic cross-references may not match the specific TRENCHSTOP™ characteristics or mechanical dimensions of the EconoPACK™ 2 housing.