FS75R12KE3GBOSA1

Overview

The FS75R12KE3GBOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the FSXR12K3G series. It features a six-pack configuration housed in an AG-ECONO2B package. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 105 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 350 W. The module operates within a junction temperature range of -40°C to +150°C and utilizes screw mount installation.

Feature Summary

• Six-pack topology for versatile inverter bridge applications
• Integrated NTC thermistor for precise thermal monitoring
• Econo2B packaging optimized for industrial mounting

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Induction heating systems

Procurement Notes

Verify the specific suffix 'BOSA1' against official Infineon documentation to confirm exact ordering details and compliance status. Ensure the component matches the required AG-ECONO2B footprint and pinout before integration into the design.

Selection Notes

Select this module for applications requiring 1200 V blocking capability and high current handling up to 105 A. Consider the 350 W power dissipation limit and the +150°C junction temperature rating when designing the thermal management system for the Econo2B package.

Part Context

This part is part of the FSXR12K3G family, utilizing Trenchstop technology. It serves as a robust power switching solution for industrial environments, offering a balance of low conduction losses and reliable performance in standard six-pack configurations.

Replacement Considerations

FS75R12KE3BPSA1 is listed as a parameter-equivalent alternative by distributors.