SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS75R12KT3BPSA1 is a six-pack IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3 technology. It features a 1200 V collector-emitter voltage rating and supports a continuous DC collector current of 75 A at 80°C case temperature, or 105 A at 25°C. The module incorporates high-efficiency emitter-controlled diodes with a forward voltage of 1.65 V at 25°C. Key electrical parameters include a maximum power dissipation of 355 W at 25°C, an internal gate resistance of 10 Ω, and a junction-to-case thermal resistance of 0.35 K/W per IGBT. The unit operates within a junction temperature range of -40°C to 125°C.
Verify the specific ordering suffix against official documentation to confirm compliance with RoHS directives and material composition requirements. Ensure that the procurement channel provides valid traceability data and original manufacturer certification to prevent counterfeit components. Confirm that the delivered units match the exact part number designation without unauthorized modifications.
Select this component based on the required 1200 V blocking capability and the specific current handling needs of the application circuit. Evaluate the thermal resistance values to determine appropriate heatsinking solutions for maintaining safe operating temperatures. Consider the internal gate resistance when designing the gate driver circuitry to achieve desired switching speeds and minimize electromagnetic interference.
This module belongs to the FS75R12KT3 series, which utilizes Infineon's Trenchstop IGBT3 technology. The series is characterized by its robust switching capabilities and integrated high-efficiency diodes. The EconoPACK™2 package provides a compact form factor suitable for high-density power electronics designs requiring reliable three-phase inverter configurations.
FS75R12KT3B9BPSA1