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The FS75R12KT4BPSA2 is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (ICDC) of 75 A at TC = 95°C. The repetitive peak collector current (ICRM) reaches 150 A. Typical saturation voltage (VCEsat) is 1.85 V at Tvj = 25°C. Integrated Emitter Controlled 4 diodes exhibit a typical forward voltage (VF) of 1.7 V. The module includes an NTC temperature sensor with a rated resistance of 5 kΩ at 25°C. Operating junction temperature ranges from -40°C to +150°C.
Verify the specific ordering suffix BPSA2 against official documentation to confirm exact configuration details. Ensure compliance with RoHS standards as indicated in distributor listings. Confirm that the component matches the required industrial quality grade and package dimensions before finalizing procurement orders.
Select this module for applications requiring robust thermal cycling endurance and low conduction losses. Evaluate the gate charge and internal gate resistor values when designing drive circuits. Consider the stray inductance and thermal resistance parameters for accurate heatsink sizing and system efficiency calculations.
This component belongs to the EconoPACK™2 series, designed for compact power electronics. It represents the T4 generation of IGBT technology, balancing switching speed and conduction loss. The six-pack topology integrates three half-bridge legs into a single housing, simplifying assembly for three-phase inverter topologies.
Direct replacements within the same family include variants like FS75R12KT4B11BPSA1. Verify pinout compatibility and electrical characteristics before substituting. Different suffixes may indicate variations in packaging or testing criteria rather than functional changes.
The module can withstand a short circuit for up to 10 µs at Tvj = 150°C with ISC limited to 270 A.
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute between terminals and heatsink.
The typical gate threshold voltage (VGEth) is 5.80 V at Tvj = 25°C with IC = 2.40 mA.