FST8335M

Diode Arrays Overview

The GeneSiC FST8335M is a silicon Schottky rectifier module rated for a DC blocking voltage of 35 V and an average forward current of 80 A per package. It features a maximum instantaneous forward voltage of 0.72 V at Tj = 100 °C and a peak forward surge current of 600 A (8.3 ms half-sine). The device operates within a junction temperature range of -55 to 150 °C, with a thermal resistance from junction to case of 1.10 °C/W per leg.

Diode Arrays Feature Summary

• Schottky barrier construction for high switching efficiency
• Dual-leg module configuration for balanced power distribution
• High thermal conductivity design for effective heat dissipation

Diode Arrays Applications

• DC-DC converter modules
• Power supply freewheeling circuits
• Solar panel bypass applications

Diode Arrays Procurement Notes

Verify the specific part number suffix against official GeneSiC Semiconductor documentation to confirm exact electrical tolerances and marking details. Ensure that the procurement channel provides original manufacturer packaging to maintain component integrity during storage and handling.

Diode Arrays Selection Notes

Select this component based on its 35 V rating and 80 A continuous current capability. Evaluate the 1.10 °C/W thermal resistance against the system's heatsinking requirements. Confirm that the 0.72 V forward voltage drop aligns with the application's efficiency targets under expected operating temperatures.

Diode Arrays Part Context

This component belongs to the FST83xxM series of silicon Schottky rectifiers manufactured by GeneSiC Semiconductor. The series offers various voltage ratings including 20 V, 30 V, and 40 V options, all sharing similar current and thermal characteristics suitable for medium-power conversion tasks.

Diode Arrays Replacement Considerations

Cross-reference with other 35 V, 80 A Schottky modules from GeneSiC or equivalent manufacturers. Verify pinout compatibility and thermal resistance values before substitution.