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Product Detailed Parameters
- Description：IGBT MODULE 3300V 1000A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：3300 V
- Current - Collector (Ic) (Max)：1000 A
- Power - Max：-
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：190 nF @ 25 V
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Overview
The FZ1000R33HE3BPSA1 is a single-switch IGBT module from Infineon's IHM-B series, utilizing third-generation trench gate and field-stop technology. It features a nominal collector current of 1000 A and a repetitive peak current of 2000 A at a voltage class of 3300 V. The device incorporates an AlSiC substrate for enhanced thermal cycling capability and offers a maximum junction temperature of 150°C. Key electrical parameters include a saturation voltage (VCEsat) of 2.55 V typical at 25°C and a short-circuit withstand time of up to 10 µs. The module weighs 800 g and provides high DC stability with positive temperature coefficient characteristics.
Feature Summary
- High short-circuit capability with self-limiting behavior
- AlSiC baseplate for superior thermal cycling resistance
- Low switching losses and low saturation voltage
- Positive temperature coefficient for safe parallel operation
Applications
- Traction converters
- Medium voltage inverters
- Motor drives
- Wind power generators
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the component status before integration, as this specific part number may be designated as Not Recommended for New Designs (NRND). Confirm that the BPSA1 suffix aligns with required packaging or labeling specifications. Ensure compliance with export control regulations if applicable. Validate that the supplier provides original manufacturer documentation to guarantee authenticity and traceability.
Selection Notes
Select this module for high-power applications requiring robust short-circuit immunity and high current density. The 3300 V rating suits medium-voltage industrial systems. Consider the thermal management requirements associated with the AlSiC substrate and the specified mounting torque values. Ensure the gate drive circuitry supports the recommended ±15 V levels and internal gate resistance values for optimal switching performance.
Part Context
This component belongs to Infineon's Trenchstop IGBT3 family, specifically designed for high-reliability industrial and traction markets. The IHM-B package format is engineered for high-current density and efficient heat dissipation. It represents a mature technology platform optimized for balancing switching speed, conduction losses, and ruggedness in demanding power conversion environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon selection guides for alternative modules within the IHM-B series or newer generations such as IGBT4, ensuring voltage, current, and thermal compatibility.
