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The FZ1200R12KF5NDSA1 is a silicon IGBT module manufactured by Infineon Technologies. It features a single switch configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current rating of 1.2 kA at 25°C. The device utilizes Trench/Fieldstop technology, offering a typical saturation voltage of 1.75 V and a power dissipation capacity of 7.15 kW. Designed for robust industrial applications, it operates within a temperature range of -40°C to +150°C.
This component is classified as obsolete or not recommended for new designs. Verify availability through authorized distributors, noting potential lead times and limited stock. Confirm final part status and datasheet revisions before integration into production schedules to ensure supply chain stability.
Select this module for high-power single-switch applications requiring 1.2 kV blocking voltage and 1.2 kA current capacity. Ensure thermal management solutions support the specified power dissipation. Evaluate compatibility with existing gate drive circuits and mechanical mounting constraints for the specific package type.
Part of Infineon's IGBT module portfolio utilizing advanced trench fieldstop technology. Designed for demanding power electronics environments where reliability and high current density are critical requirements for system performance and longevity.
Public confirmed substitute part numbers: None identified in available documentation.