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The FZ1200R12ME4B11BOSA1 is a single-switch IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 1825 A at 25°C. The device has a typical collector-emitter saturation voltage of 1.75 V and a power dissipation rating of 7.15 kW. Operating within a temperature range of -40°C to +150°C, it uses a Tray package.
Verify the exact part number suffix against official manufacturer documentation, as variations such as BPSA1 or HOSA2 may exist. Confirm RoHS compliance status through the specific datasheet provided by Infineon. Ensure that the ordering information matches the required technical specifications before procurement.
Select this component for applications requiring high current handling in a single-switch topology. Consider the 1.75 V saturation voltage for conduction loss calculations. Verify that the cooling solution supports the 7.15 kW power dissipation rating. Ensure gate drive requirements align with standard IGBT4 characteristics.
This module belongs to the Trench/Fieldstop IGBT4 series, designed for robust industrial performance. It is part of Infineon's portfolio of silicon-based power modules. The EconoDUAL PressFIT form factor facilitates mounting. It serves as a core switching element in medium-voltage power conversion systems.
Publicly confirmed substitute part numbers include FZ1200R12HE4 and FF300R12ME4_B11. Verify pinout compatibility and thermal resistance values before substitution. Check if the alternative meets the specific current and voltage ratings required by the design.