FZ1200R17HP4HOSA2

Overview

The FZ1200R17HP4HOSA2 is a single-switch IGBT module from Infineon Technologies, utilizing Silicon technology and belonging to the IGBT4 - P4 series. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 1.2 kA at 25°C. The typical collector-emitter saturation voltage is 1.9 V, with a gate-emitter leakage current of 400 nA. Power dissipation reaches 7.8 kW, operating within a temperature range of -40°C to +150°C. The component weighs 1.3 kg and is supplied in trays.

Feature Summary

• Single switch configuration for high-power applications
• Robust construction suitable for industrial environments
• High short circuit capability

Applications

• Industrial traction systems
• High power inverters
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific ordering suffix HOSA2 against official documentation to confirm RoHS compliance status and exact manufacturing details. Confirm tray packaging quantities and lead times directly with authorized distributors or the manufacturer before placing orders.

Selection Notes

Select this module for applications requiring 1.7 kV blocking voltage and 1.2 kA continuous current handling. Ensure thermal management solutions support the 7.8 kW power dissipation rating. Verify compatibility with screw mount installation methods and standard gate drive requirements for IGBT4 series components.

Part Context

This component belongs to the Infineon IGBT4 - P4 series, designed for robust industrial performance. It shares characteristics with other IHM-B modules but is distinct in its specific voltage and current ratings. The part number alias SP001172046 links it to broader product databases.

Replacement Considerations

FZ1200R17HE4PHPSA1 offers similar electrical specifications but utilizes the E4 series technology and different housing. Verify pinout compatibility and thermal interface requirements when substituting.