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Product Detailed Parameters
- Description：IGBT MODULE 1700V 1200A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 1.2kA
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：1200 A
- Power - Max：9600 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：79 nF @ 25 V
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Overview
The FZ1200R17KF6CB2NOSA1 is a single IGBT inverter module from Infineon Technologies, utilizing 2nd generation low-loss IGBT technology and a soft Emitter Controlled Diode. It features a collector-emitter voltage of 1700 V and a continuous DC collector current of 1200 A at 80°C case temperature. The module operates within a junction temperature range of -40°C to +125°C. Key electrical parameters include a maximum gate-emitter peak voltage of ±20 V, a typical turn-on energy loss of 330 mJ, and a total power dissipation of 9.6 kW at 25°C. The unit weighs 1050 g.
Feature Summary
- Incorporates 2nd generation low-loss IGBT technology for optimized switching performance.
- Features a soft Emitter Controlled Diode to minimize reverse recovery losses.
- Provides high short-circuit capability with a repetitive peak collector current of 2400 A.
Applications
- Industrial motor drives
- Medium voltage inverters
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure that the component matches the required thermal interface specifications and mounting torque values before integration into the final assembly design.
Selection Notes
Select this module for applications requiring robust 1700 V blocking capability and high current handling up to 1200 A. Consider the thermal resistance characteristics and the specified operating temperature limits when designing the heatsink and cooling system for optimal efficiency.
Part Context
This component belongs to the FZ series of IGBT modules manufactured by Infineon Technologies. It represents a specific variant within the broader portfolio of power semiconductor devices designed for demanding industrial and traction applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer resources for potential cross-references or updated series replacements.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current is 2400 A for a pulse duration of 1 ms.
What is the isolation test voltage of the module?
The isolation test voltage is 4.0 kV RMS at 50 Hz for 1 minute.
What is the internal gate resistor value?
The internal gate resistor is typically 0.81 Ω at a junction temperature of 25°C.
