FZ1200R33KF2CB3S2NDSA1

Overview

The FZ1200R33KF2CB3S2NDSA1 is a single-switch IGBT inverter module manufactured by Infineon Technologies. It features a collector-emitter voltage of 3300 V and a continuous DC collector current of 1200 A at 80°C case temperature, with a maximum repetitive peak collector current of 2400 A. The module utilizes an AlSiC baseplate for thermal management and incorporates internal gate resistors (RGint = 0.42 Ω). Key electrical parameters include a typical collector-emitter saturation voltage of 3.40 V at 25°C and a forward diode voltage of 2.80 V. Total power dissipation reaches 14.5 kW at 25°C, with a junction-to-case thermal resistance of 8.5 K/kW per IGBT.

Feature Summary

• Robust construction utilizing an Aluminum Silicon Carbide (AlSiC) baseplate to enhance thermal cycling capability and mechanical stability under high-power switching conditions.
• Integrated short-circuit withstand capability allowing operation up to 6000 A for pulse durations not exceeding 10 µs, providing protection against fault currents.
• High isolation performance with a dielectric test voltage of 6.0 kV RMS and partial discharge extinction voltage of 2.6 kV RMS, ensuring safety in high-voltage environments.

Applications

• Traction systems for electric vehicles and rail transport
• High-voltage direct current (HVDC) transmission converters
• Flexible AC transmission systems (FACTS)
• Medium-voltage industrial motor drives

Procurement Notes

Verify the specific ordering suffix B3S2NDSA1 against official Infineon documentation to confirm exact packaging, marking, or environmental compliance variations. Confirm RoHS status and lead times directly with authorized distributors, as availability may vary based on production cycles and regional stock levels.

Selection Notes

Select this component for applications requiring high voltage blocking capabilities above 3000 V combined with significant current handling. Ensure the cooling system design accounts for the specified junction-to-case thermal resistance and that the gate drive circuitry matches the recommended ±15 V operating range and internal resistor values.

Part Context

This module belongs to the FZ series of high-power IGBT inverters from Infineon Technologies. It is designed for demanding power conversion tasks where reliability under extreme thermal and electrical stress is critical. The technology represents a mature silicon-based solution optimized for industrial and traction inverter topologies.

Replacement Considerations

Direct replacements must match the 3300 V / 1200 A rating and physical footprint. Verify compatibility of thermal interface materials and mounting torque specifications (M6 screws: 4.25 - 5.75 Nm) when substituting with other high-voltage modules from different manufacturers.