FZ1200R45HL3BPSA1

Overview

The FZ1200R45HL3 is an IHM-B IGBT module featuring Trench/Fieldstop IGBT3 technology and emitter-controlled diodes. It provides a collector-emitter voltage of 4500 V and a nominal continuous DC collector current of 1200 A at 95 °C case temperature, with a repetitive peak current capability of 2400 A. The device utilizes an AlSiC base plate for enhanced thermal cycling robustness and operates within a junction temperature range of -40 °C to +150 °C. Key electrical parameters include a typical saturation voltage of 2.80 V at 25 °C and a maximum power dissipation of 2400 kW.

Feature Summary

• High short-circuit capability and high dynamic robustness
• AlSiC base plate construction for increased thermal cycling capability
• Collector-emitter saturation voltage with positive temperature coefficient
• Package insulation with comparative tracking index exceeding 600

Applications

• High-power converters
• Medium-voltage converters
• Power transmission and distribution

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure compliance with industrial qualification standards such as IEC 60747, 60749, and 60068 prior to integration. Confirm mounting torque specifications for M6, M4, and M8 screws to maintain mechanical integrity and proper thermal interface performance during installation.

Selection Notes

Select this component for applications requiring high voltage isolation and significant current handling capacity in industrial environments. Evaluate the thermal resistance values and switching energy losses against system cooling requirements. Consider the positive temperature coefficient of the saturation voltage for potential parallel operation stability and ensure gate drive circuits accommodate the specified internal gate resistor and charge characteristics.

Part Context

This module belongs to the IHM-B series designed for high-power industrial applications. It integrates Trench/Fieldstop IGBT3 technology with emitter-controlled diodes to optimize switching performance and conduction losses. The design supports demanding operational conditions through robust packaging and advanced semiconductor architecture suitable for heavy-duty power conversion systems.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Verify that alternative components match the 4500 V rating, 1200 A current capacity, and IHM-B housing dimensions to ensure mechanical compatibility without modification.