FZ1200R45HL3S7BPSA1

Overview

The FZ1200R45HL3S7BPSA1 is an IHM-B module utilizing Trench/Fieldstop IGBT3 technology with emitter-controlled diodes. It features a collector-emitter voltage of 4500 V and a nominal continuous DC collector current of 1200 A at 100°C case temperature, with a repetitive peak current capability of 2400 A. The device incorporates an AlSiC base plate for enhanced thermal cycling performance and isolated base plates. Electrical characteristics include a typical saturation voltage of 2.60 V at 25°C and a maximum gate-emitter voltage of 26.25 V. The module supports operation across a junction temperature range of -40°C to +150°C.

Feature Summary

• High short-circuit capability and high dynamic robustness
• AlSiC base plate construction for increased thermal cycling capability
• Low saturation voltage with positive temperature coefficient
• Package with comparative tracking index exceeding 600

Applications

• High-power converters
• Medium-voltage converters
• Power transmission and distribution

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm mechanical variations or packaging details. Ensure compliance with industrial qualification standards such as IEC 60747, 60749, and 60068 before integration. Confirm mounting torque specifications for M6, M4, and M8 screws to maintain proper electrical isolation and thermal contact.

Selection Notes

Select this component for applications requiring high voltage blocking capabilities up to 4500 V. Evaluate the thermal resistance values and power dissipation limits relative to the intended cooling strategy. Consider the positive temperature coefficient of the saturation voltage for potential parallel operation stability in high-current designs.

Part Context

This part belongs to the Infineon IHM-B module family designed for industrial traction and high-power applications. It utilizes IGBT3 technology, which provides a balance between low conduction losses and robust switching performance. The series is engineered for demanding environments requiring high reliability and long operational lifetimes.

Replacement Considerations

FZ1200R45HL3_S7

FAQ

What is the maximum allowable dv/dt for this module?

The maximum allowed dv/dt measured between 0.6 and 1xVce is 2400 V/µs.

Does the module feature an isolated base plate?

Yes, the module includes an isolated base plate with a comparative tracking index greater than 600.

What is the short-circuit withstand time?

The module is qualified for a short-circuit time of up to 10 µs at a junction temperature of 150°C.