FZ1200R45HL4BPSA1

Overview

The FZ1200R45HL4BPSA1 is a high-voltage IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a triple configuration within an IHM-B housing with an AlSiC base plate. Key electrical parameters include a collector-emitter voltage (VCES) of 4300 V at -40°C and 4500 V at 150°C. The continuous DC collector current (ICDC) is rated at 1200 A at a case temperature of 110°C, with a repetitive peak current (ICRM) of 2400 A. The typical collector-emitter saturation voltage (VCE,sat) is 2.30 V at 25°C for 1200 A. The module supports a maximum junction temperature of 150°C and includes integrated emitter-controlled diodes.

Feature Summary

• High short-circuit capability and dynamic robustness
• AlSiC base plate for increased thermal cycling capability
• Low VCE,sat with positive temperature coefficient
• Isolated base plate with CTI > 600

Applications

• High-power converters
• Medium-voltage converters
• Power transmission and distribution

Procurement Notes

Verify the specific ordering suffix BPSA1 against official documentation to confirm packaging and marking details. Ensure compliance with industrial qualification standards such as IEC 60747, 60749, and 60068. Confirm insulation coordination requirements, including isolation test voltage and partial discharge extinction voltage, match system specifications before procurement.

Selection Notes

Select this module for applications requiring high voltage blocking capability up to 4.5 kV and high current handling. Consider the thermal resistance values and mounting torque specifications for proper heatsink interface design. Evaluate the gate charge and internal gate resistor characteristics for driver compatibility. Verify that the operating temperature range and short-circuit withstand time meet the system's fault protection requirements.

Part Context

This component belongs to the IHM-B module series, designed for industrial traction and power electronics. It integrates Trench/Fieldstop IGBT4 chips with emitter-controlled diodes. The package utilizes an AlSiC base plate to enhance thermal performance and mechanical stability under high power cycling conditions compared to traditional ceramic substrates.

Replacement Considerations

Check datasheets for alternative Infineon models in the IHM-B series or other high-voltage IGBT modules. Verify pinout compatibility, thermal resistance, and mechanical dimensions. Ensure voltage and current ratings are equal or superior. Confirm switching characteristics and gate drive requirements align with existing circuit designs.