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The FZ1500R33HE3C1BPSA1 is a single IGBT module from Infineon's Trenchstop IGBT3 series, utilizing silicon technology. It features a maximum collector-emitter voltage of 3300 V and a nominal continuous collector current of 1500 A at 25°C, with a repetitive peak current rating of 3000 A. The device offers a low saturation voltage of 2.55 V and supports a power dissipation of 2400 W. Designed for high robustness and short-circuit capability, it operates within a junction temperature range of -40°C to +150°C.
Verify the specific suffix C1BPSA1 against official datasheets to confirm package and pinout compatibility. Ensure export documentation requirements are met as this product may require additional files for shipment from the United States. Confirm RoHS compliance status through manufacturer declarations prior to integration into regulated assemblies.
Select this component for applications requiring high voltage blocking capabilities up to 3300 V combined with substantial current handling. The Trenchstop IGBT3 technology provides an optimal balance between conduction and switching losses. Consider the IHVB190 package dimensions and thermal characteristics for heatsink interface design and mechanical mounting constraints.
This module belongs to the Trenchstop IGBT3 family, representing a generation of silicon-based power semiconductors optimized for high-power density. It serves as a core switching element in medium to high-voltage power conversion architectures, replacing older technologies with improved ruggedness and efficiency metrics for modern industrial electronics.
Public confirmed substitute part numbers: FZ1500R33HE3, FZ1500R33HE3BPSA1.