SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FZ1500R33HE3S6BOSA1 is a single-switch silicon IGBT module from Infineon Technologies, part of the Trenchstop IGBT3 - E3 series. It features a maximum collector-emitter voltage (VCEO) of 3.3 kV and a continuous collector current of 1.5 kA at 25°C. The saturation voltage is 2.55 V, with a power dissipation rating of 2.4 MW. Operating temperatures range from -40°C to +150°C. The gate-emitter leakage current is specified at 400 nA. The component utilizes an IHV IHM T package configuration and is supplied in tray packaging.
Verify authenticity through authorized Infineon channels or certified distributors. Request original datasheets and RoHS compliance documentation upon order confirmation. Confirm export license requirements if shipping from restricted regions. Validate batch codes against manufacturer records to ensure traceability and quality assurance during procurement processes.
Select this module for high-power industrial applications requiring 3.3 kV blocking capability. Ensure thermal management solutions support the 2.4 MW dissipation rating. Verify that gate drive circuits accommodate the specified electrical characteristics. Consider the IHV IHM T package dimensions for mechanical integration within the target system design constraints.
This component belongs to the Infineon Trenchstop IGBT3 family, specifically designed for high-voltage industrial use. It serves as a high-current switching element within power electronics architectures. The S6BOSA1 suffix denotes specific manufacturing and packaging variations within the broader FZ1500R33HE3 product line.
The FZ1500R33HL3 is a documented alternative within the same voltage and current class, though it utilizes the L3 series technology and IHVB190 package. Verify pinout compatibility and thermal interface specifications before substitution.