FZ1600R17HP4B21BOSA2

Overview

The FZ1600R17HP4_B21 is a single-switch IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology with an integrated Emitter Controlled Diode. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 1600 A at TC = 100°C. The repetitive peak collector current reaches 3200 A for 1 ms pulses. Total power dissipation is rated at 10.5 kW. The module operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a typical VCEsat of 2.25 V at Tvj = 25°C and a forward voltage (VF) of 2.20 V for the diode at 150°C. Thermal resistance from junction to case is 11.6 K/kW for the IGBT and 19.6 K/kW for the diode.

Feature Summary

• AlSiC base plate construction designed to enhance thermal cycling capability and robustness under high-power conditions.
• Extended operating junction temperature range up to 150°C combined with low saturation voltage for optimized efficiency.
• High insulation strength rated at 4 kV AC for one minute, ensuring safety in demanding industrial environments.
• Package design featuring high creepage and clearance distances alongside a comparative tracking index exceeding 400.

Applications

• Resonant inverter applications
• High power converters
• Traction drives
• Wind turbines

Procurement Notes

Verify the specific ordering suffix B21 against official documentation to confirm exact manufacturing details and compliance status. Confirm that the component matches the IHM-B housing type and AlSiC base plate specifications required for your thermal management design. Ensure all mounting torque values for M6 and M4/M8 terminals strictly follow the valid application notes provided by the manufacturer to prevent mechanical failure.

Selection Notes

Select this module when designing systems requiring high current density and robust thermal performance in a single-switch topology. The 1700 V rating suits medium-voltage industrial drives and renewable energy inverters. Evaluate the thermal resistance values against your heatsink capabilities to ensure junction temperatures remain within the 150°C limit during peak switching cycles and continuous operation.

Part Context

This component belongs to the Infineon IGBT4 series, specifically utilizing Trench/Fieldstop technology for improved switching characteristics. It is housed in the IHM-B package, which is part of the High-Power Module family designed for industrial traction and renewable energy applications. The module integrates both the IGBT switch and the anti-parallel diode in a single compact unit.

Replacement Considerations

Public confirmed substitute part numbers are not available in the verified source material. Consult official Infineon cross-reference guides or technical support for potential replacements based on specific electrical and mechanical constraints.

FAQ

What is the maximum repetitive peak collector current?

The maximum repetitive peak collector current (ICRM) is 3200 A for a pulse duration of 1 ms.

Does the module include an internal gate resistor?

Yes, the module has an internal gate resistor (RGint) with a typical value of 0.97 Ω at a junction temperature of 25°C.

What is the isolation test voltage specification?

The isolation test voltage (VISOL) is 4.0 kV RMS at 50 Hz for a duration of 1 minute.