FZ1600R17HP4B2BOSA2

$837.15

Description：IGBT MODULE 1700V 1600A
Series：IHM-B

SKU:49a0d8b030a3 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1700V 1600A
Series：IHM-B
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Single Switch
Vce(on) (Max) @ Vge, Ic：2.25V @ 15V, 1.6kA
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：A-IHV130-3
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：1600 A
Power - Max：10500 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：130 nF @ 25 V

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FZ1600R17HP4B2BOSA2

Overview

The Infineon FZ1600R17HP4B2BOSA2 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 1600 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 3200 A for 1 ms pulses. Total power dissipation (Ptot) is rated at 10.5 kW at TC = 25°C. The module operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a typical VCEsat of 2.25 V at Tvj = 150°C and a forward voltage (VF) of 2.10 V for the diode at 150°C. It incorporates an AlSiC base plate and provides 4 kV AC insulation.

Feature Summary

Trench/Fieldstop IGBT4 technology combined with an Emitter Controlled Diode for low saturation voltage and enhanced regenerative operation capability.
AlSiC base plate construction designed to provide increased thermal cycling capability and high power density.
Extended operating temperature range supporting junction temperatures up to 150°C.
High creepage and clearance distances with a package CTI greater than 400.

Applications

Resonant inverter applications
High power converters
Traction drives
Wind turbines

Procurement Notes

Verify the specific ordering suffix B2BOSA2 against official documentation to confirm exact packaging, labeling, or regional compliance variations. Confirm that the requested quantity aligns with manufacturer standard packing configurations. Ensure all technical specifications match the design requirements before finalizing orders.

Selection Notes

Select this component for high-power industrial applications requiring robust thermal cycling performance due to the AlSiC base plate. Evaluate switching losses and thermal resistance values against the system's cooling capabilities. Ensure gate drive circuits accommodate the specified internal gate resistor and charge requirements for optimal switching behavior.

Part Context

This module belongs to the IHM-B housing series from Infineon Technologies. It represents a high-current solution within the IGBT4 product family, specifically engineered for demanding power conversion environments. The designation indicates a single switch configuration integrated with a complementary diode.