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The FZ1600R17KE3NOSA1 is a single-switch IGBT module from Infineon's Trenchstop IGBT3 - E3 series. It features a collector-emitter voltage of 1700 V and a continuous DC collector current of 2300 A at 25°C, with a nominal rating of 1600 A. The module utilizes an IHM130 package and operates within a junction temperature range of -40°C to 125°C. Key electrical parameters include a maximum repetitive peak collector current of 3200 A, a gate-emitter peak voltage of ±20 V, and a total power dissipation of 8.95 kW at 25°C.
Verify the exact ordering suffix against official documentation to confirm specific manufacturing lot details or regional compliance variations. Confirm that the component status aligns with project requirements, as availability may be subject to manufacturer production schedules. Ensure all technical specifications match the intended application constraints before finalizing procurement orders.
Select this module for applications requiring high current handling capabilities up to 2300 A. Consider the thermal resistance values when designing the heatsink interface. Verify that the gate drive circuitry can accommodate the specified gate charge and internal gate resistor values to ensure stable switching operations under varying load conditions.
This component belongs to the FZ1600R17KE3 product line, representing a specific variant within Infineon's high-power IGBT portfolio. It shares core electrical characteristics with other modules in the same series but may differ in packaging or specific manufacturing batch attributes defined by the ordering code.
FZ1600R17HP4HOSA2 is listed as a manufacturer-recommended alternative. Evaluate thermal and electrical compatibility before substitution.