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The FZ1600R17KF6CB2S2NOSA1 is a single-switch IGBT module from Infineon Technologies, utilizing A-IHM130-1 packaging. It features a 1700 V voltage rating and a nominal collector current of 1600 A. The device incorporates an integrated anti-parallel diode with a forward voltage of 1.8 V at Tvj=25°C. The IGBT saturation voltage is typically 2 V at the same temperature. Designed for industrial applications, it operates within a standard temperature range suitable for high-power conversion systems.
Verify the complete part number including suffixes to ensure correct configuration. Confirm compatibility with existing thermal management solutions. Check for updated datasheets regarding thermal characteristics. Validate that the specific variant matches system requirements before procurement.
Select this module for applications requiring robust 1700 V blocking capability and high continuous current. Consider the thermal resistance and package dimensions during mechanical design. Ensure gate drive parameters align with the specified electrical limits for optimal performance.
This component belongs to Infineon's IGBT module portfolio, designed for demanding industrial environments. It represents a solution for high-power density applications where reliability and efficiency are critical. The technology supports modern power electronics architectures.
FZ1600R17KE3 is a documented alternative within the manufacturer's lineup. Verify pinout compatibility and thermal interface specifications when considering substitution.