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The FZ1800R45HL4BPSA1 is a single-switch IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 4500 V and a nominal continuous DC collector current (ICDC) of 1800 A at a case temperature of 100 °C. The device incorporates an AlSiC base plate within the IHM-B housing to enhance thermal cycling capability. Key electrical parameters include a typical saturation voltage (VCE,sat) of 2.35 V at 25 °C and a maximum short-circuit withstand time of 10 µs. The module provides high dynamic robustness and positive temperature coefficient characteristics for stable parallel operation.
Verify the specific ordering suffix BPSA1 against official documentation to confirm packaging details and regional compliance requirements. Ensure that the procurement channel provides valid traceability data consistent with Infineon's quality management system. Cross-reference the material number to avoid confusion with similar variants in the IHM-B series.
Select this component for applications requiring high voltage blocking capability up to 4500 V and substantial current handling at 1800 A. The AlSiC base plate makes it suitable for environments demanding high thermal shock resistance. Designers must account for the specific thermal resistance values provided in the datasheet when calculating heatsink requirements for sustained operation at elevated junction temperatures.
This module belongs to Infineon's IHM-B (IGBT High-Power Modules) family, designed for industrial traction and power conversion. It utilizes the fourth-generation Trench/Fieldstop IGBT technology, which offers improved switching performance compared to previous generations. The standard housing design facilitates integration into existing medium-voltage converter architectures used in grid infrastructure and heavy industry.
Direct replacements within the same package and rating require careful evaluation of switching energy losses and thermal resistance. Verify compatibility with existing gate drive circuits, as internal gate resistance and charge characteristics may differ between IGBT generations.