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The FZ2400R12KE3NOSA1 is a single IGBT module from Infineon Technologies, utilizing TRENCHSTOP™ IGBT3 technology. It features a maximum collector-emitter voltage of 1200 V and a nominal continuous collector current of 650 A at 25°C. The saturation voltage is typically 1.7 V. Designed for industrial applications, it operates within a junction temperature range of -40°C to +125°C. The module employs screw mounting and has a physical dimension of 62 mm. Power dissipation capability reaches 2.25 kW, with a gate-emitter leakage current of 400 nA and a maximum gate-emitter voltage of 20 V.
Verify the specific ordering suffix against official Infineon documentation to ensure correct configuration. Confirm RoHS compliance status through the manufacturer's datasheet or material content sheet. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Select this module for applications requiring high current density in a compact footprint. Ensure the cooling system can handle the specified power dissipation of 2.25 kW. Verify that the drive circuitry supports the required gate voltage limits and switching frequencies associated with the IGBT3 generation.
This component belongs to the FZ series of single IGBT modules from Infineon. It represents a high-power discrete solution designed for robust industrial use. The KE3 designation indicates the specific technology generation and package style within the broader product portfolio.
Direct replacements should be sought within the same FZ series or compatible KE3 family modules. Verify pinout compatibility and thermal interface dimensions when substituting. Consult official cross-reference lists for confirmed equivalent part numbers.