FZ2400R17KE3NOSA1

Description：IGBT MODULE 1700V 2400A
Series：IHM-B

SKU:58a54bbde0d4 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1700V 2400A
Series：IHM-B
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：Single Switch
Vce(on) (Max) @ Vge, Ic：-
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：3200 A
Power - Max：12500 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：18.5 nF @ 25 V

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FZ2400R17KE3NOSA1

Overview

The FZ2400R17KE3NOSA1 is a single-switch IGBT module rated for 1700 V collector-emitter voltage and 2400 A continuous DC collector current at TC = 80°C. It features a maximum total power dissipation of 12.5 kW at 25°C case temperature. The device incorporates an integrated anti-parallel diode with a forward current rating of 2400 A. Key electrical parameters include a typical saturation voltage of 2.00 V and a forward voltage of 1.80 V at 25°C. Thermal resistance from junction to case is specified at 10.0 K/kW for the IGBT and 24.0 K/kW for the diode.

Feature Summary

Single-switch topology integrating an IGBT and an anti-parallel diode within one package.
High short-circuit capability supporting up to 9200 A under defined conditions.
Robust insulation structure utilizing aluminum oxide (Al2O3) for basic isolation.

Applications

Industrial motor drives
Medium-voltage inverters
Uninterruptible power supplies

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration, as suffixes may indicate variations in packaging or terminal plating. Confirm compliance with RoHS directives and check for any active lifecycle status updates directly through authorized distribution channels before finalizing procurement plans.

Selection Notes

Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Ensure gate drive circuits can accommodate the recommended ±15 V operating range and internal gate resistor specifications. Verify that the application's peak repetitive currents remain within the 4800 A limit to maintain device reliability.

Part Context

This component belongs to the FZ series of high-power IGBT modules manufactured by Infineon Technologies. It utilizes silicon technology designed for industrial applications requiring high current handling and robust performance under demanding switching conditions.