FZ3600R17HP4HOSA2

Overview

The Infineon FZ3600R17HP4HOSA2 is a single-switch IGBT module utilizing Trench-IGBT4 technology within the IHM-B housing. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 3600 A at TC = 100°C. The device supports a repetitive peak collector current (ICRM) of 7200 A for 1 ms pulses. Typical saturation voltage (VCEsat) is 1.90 V at Tvj = 25°C, with a maximum total power dissipation (Ptot) of 21.0 kW at TC = 25°C. Operating junction temperature ranges from -40°C to +150°C.

Feature Summary

• Soft-switching Trench-IGBT4 technology for low conduction losses
• High insulation capability with 4 kV AC isolation test voltage
• Robust construction with copper base plate and high creepage distances
• Extended operation temperature range up to 150°C

Applications

• High-power converters
• Motor drives

Procurement Notes

Verify the specific HOSA2 suffix against official documentation to confirm material content or compliance status. Confirm mounting torque specifications for M6 screws (4.25 - 5.75 Nm) and terminal connections during integration. Ensure thermal interface material selection aligns with the specified thermal resistance values in the datasheet.

Selection Notes

Select this module for applications requiring high current density and robust short-circuit capability. Evaluate thermal management requirements based on the junction-to-case thermal resistance of 7.20 K/kW per IGBT. Consider the internal gate resistor value of 0.54 Ω when designing driver circuits for optimal switching performance.

Part Context

This component belongs to the Infineon IGBT4-P4 series, designed for industrial traction and high-power inverter applications. It utilizes the standardized IHM-B housing format, facilitating compatibility with existing cooling structures and mechanical designs common in large-scale power electronics systems.

Replacement Considerations

FZ3600R17HE4