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The FZ500R65KE3C1NPSA1 is a highly insulated IGBT module utilizing Trench/Fieldstop IGBT3 technology with an emitter-controlled diode. It features a collector-emitter voltage of 6500 V and a nominal continuous collector current of 500 A at 80 °C case temperature, with a repetitive peak current capability of 1000 A. The device incorporates an AlSiC base plate for enhanced thermal cycling performance and provides high creepage and clearance distances. Electrical characteristics include a typical saturation voltage of 3.0 V at 25 °C and a maximum gate-emitter voltage of ±20 V.
Verify the specific ordering suffix C1NPSA1 against official Infineon documentation to confirm exact mechanical or electrical variations compared to the standard FZ500R65KE3. Ensure compliance with export regulations if sourcing from restricted regions. Confirm RoHS status and material content sheets prior to final procurement decisions.
Select this component for applications requiring high voltage insulation and robust thermal management in traction or medium-voltage environments. Evaluate the 10.4 kV isolation rating against system requirements. Consider the AlSiC base plate benefits for high-power cycling scenarios. Verify mounting torque specifications for M6, M4, and M8 screws during integration.
This module belongs to the Infineon IGBT3-E3 series, designed for industrial and traction applications. It represents a high-power solution within the company's portfolio of highly insulated modules. The product is qualified according to IEC 60747, 60749, and 60068 standards for industrial use.
Direct substitutes are not explicitly listed in the provided datasheet. Review the FZ500R65KE3NOSA1 as a potential equivalent part number variant. Consult Infineon cross-reference tools for compatible replacements with matching voltage and current ratings.