FZ600R12KP4HOSA1

Overview

The FZ600R12KP4HOSA1 is a single IGBT module from Infineon's 62mm C-Series, utilizing Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 600 A at TC = 100°C with a maximum junction temperature of 175°C. The repetitive peak collector current (ICRM) is 1200 A for 1 ms pulses. At Tvj = 25°C, the typical collector-emitter saturation voltage (VCEsat) is 1.70 V, rising to 2.10 V max at 150°C. Gate threshold voltage (VGEth) is typically 5.80 V. Switching losses at Tvj = 150°C include turn-on energy (Eon) of 55 mJ and turn-off energy (Eoff) of 105 mJ. Thermal resistance RthJC is 0.048 K/W per IGBT.

Feature Summary

• Extended operating junction temperature capability up to 175°C
• Low collector-emitter saturation voltage with positive temperature coefficient
• High robustness against short-circuit conditions
• Isolated base plate with high creepage and clearance distances

Applications

• High power converters
• Motor drives
• UPS systems
• Wind turbines

Procurement Notes

Verify the complete part number including the HOSA1 suffix against official Infineon documentation to confirm specific ordering and marking details. Confirm RoHS compliance status and relevant safety certifications such as UL or CSA before procurement. Ensure that the sourcing channel provides valid traceability data matching the module label codes described in the datasheet.

Selection Notes

Select this component for applications requiring high current density within a standard 62 mm housing footprint. The 175°C junction temperature rating allows for higher thermal margins compared to standard 150°C modules. Verify that the gate drive circuitry supports the specified VGE range and internal gate resistance characteristics for optimal switching performance.

Part Context

This module belongs to the Infineon 62mm C-Series family, designed for high-performance industrial applications. It integrates Trench/Fieldstop IGBT4 technology with an Emitter Controlled 4 diode to optimize switching behavior and conduction losses. The series is engineered to provide flexibility and reliability for modern inverter designs across various power levels.

Replacement Considerations

Direct replacements must match the 62mm mechanical footprint and 1200V/600A electrical ratings. Consider modules from the same IGBT4 generation or newer variants like the KE4 series if thermal or switching improvements are required, ensuring pinout compatibility and similar thermal resistance values.