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The FZ600R17KE4HOSA1 is a single-switch IGBT module from Infineon's Trenchstop IGBT4 E4 series, designed for high-power applications. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 600 A at TC=100°C, reaching 840 A at TC=25°C. The repetitive peak collector current (ICRM) is 1200 A. Typical saturation voltage (VCEsat) is 1.95 V at Tvj=25°C. The integrated emitter-controlled diode has a typical forward voltage (VF) of 1.80 V. Total power dissipation is 3350 W. Operating junction temperature ranges from -40°C to 150°C. Thermal resistance RthJC is 0.045 K/W for the IGBT and 0.065 K/W for the diode.
Verify the specific ordering suffix HOSA1 against official documentation to confirm compliance requirements or material specifications. Ensure that the procurement channel provides valid traceability data matching the module label codes. Confirm that the delivered units match the exact part number designation to avoid functional discrepancies in high-voltage circuits.
Select this component for applications requiring 1700 V blocking capability and high current handling up to 600 A. Consider the thermal resistance values when designing heatsinking solutions. Evaluate the switching energy characteristics against the required gate resistor values to optimize efficiency. Ensure the mechanical dimensions fit the intended mounting structure.
This module belongs to the 62mm C-Series housing family from Infineon Technologies. It utilizes the Trenchstop IGBT4 generation technology. The part is designed as a standard industrial-grade component suitable for demanding power electronics environments. It integrates both the IGBT switch and the freewheeling diode in a single package.
Direct replacements within the same series include FZ600R17KE4. Verify pinout compatibility and thermal characteristics before substitution. Cross-series replacements require careful evaluation of electrical parameters and mechanical fit.