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Product Detailed Parameters
- Description：IHV IHM T
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 750A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-50°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：A-IHV190-6
- Voltage - Collector Emitter Breakdown (Max)：6.5 kV
- Current - Collector (Ic) (Max)：750 A
- Power - Max：3 MW
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：205000 pF @ 25 V
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Overview
The FZ750R65KE3P2NOSA1 is a single IGBT module from Infineon's E3 series, rated for 6.5 kV collector-emitter voltage and 750 A continuous DC current at 80 °C case temperature. It utilizes Trench/Fieldstop IGBT3 technology with an emitter-controlled diode. The package features an AlSiC base plate and provides enhanced insulation of 10.4 kV AC for 60 seconds. Key electrical parameters include a maximum repetitive peak collector current of 1500 A, a typical saturation voltage of 3.0 V at 25 °C, and a gate threshold voltage of 6.0 V.
Feature Summary
- Highly insulated design with 10.4 kV AC isolation and CTI greater than 600
- AlSiC base plate construction to enhance thermal cycling capability
- Trench/Fieldstop IGBT3 technology combined with emitter-controlled diodes
- Extended storage temperature range down to -55 °C
Applications
- Medium-voltage converters
- Traction drives
Procurement Notes
Verify the specific ordering suffix P2NOSA1 against official documentation to confirm exact packaging or material specifications. Ensure compliance with export regulations as indicated by distributor data. Confirm RoHS status directly with the manufacturer, as some sources list conflicting information regarding compliance.
Selection Notes
Select this component for high-voltage applications requiring robust insulation and high thermal stability. The 6.5 kV rating suits medium-voltage systems. Verify that the required continuous current of 750 A aligns with the thermal management capabilities of the heatsink interface. Consider the 10.4 kV isolation when designing safety clearances.
Part Context
This part belongs to the Infineon IGBT3 - E3 family of highly insulated modules. It shares the core semiconductor technology with variants like the FZ750R65KE3 but may differ in packaging details or labeling codes. The module is designed for industrial and traction quality standards.
Replacement Considerations
The FZ750R65KE3 is the base model within this product line. Verify if the P2NOSA1 suffix denotes a specific packaging or labeling variation rather than a functional difference before substituting.
