ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MODULE 3300V 1A 9600W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：4.25V @ 15V, 800A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：3300 V
- Current - Collector (Ic) (Max)：1:00 AM
- Power - Max：9600 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：100 nF @ 25 V
Download product information
Overview
The FZ800R33KF2CNOSA2 is a single IGBT inverter module from Infineon Technologies. It features a collector-emitter voltage (VCES) of 3300 V and a continuous DC collector current (IC nom) of 800 A at TC = 80°C. The module integrates an anti-parallel diode with a repetitive peak reverse voltage (VRRM) of 3300 V and a continuous forward current (IF) of 800 A. Key electrical parameters include a maximum total power dissipation of 9.6 kW, a gate-emitter peak voltage of ±20 V, and a short-circuit withstand capability of 4000 A for up to 10 µs. Thermal resistance from junction to case is 13.0 K/kW for the IGBT and 26.0 K/kW for the diode.
Feature Summary
- High-voltage insulation rated at 6.0 kV RMS with partial discharge extinction at 2.6 kV.
- Robust short-circuit behavior capable of withstanding 4000 A for 10 µs.
- AlSiC baseplate material combined with AlN internal isolation for enhanced thermal management.
Applications
- Industrial motor drives
- Medium voltage variable frequency drives
- Uninterruptible power supplies
Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to confirm specific manufacturing revisions or packaging variations. Confirm compliance with RoHS directives and ensure that the component matches the preliminary data specifications provided in the datasheet before finalizing procurement orders.
Selection Notes
Select this module for applications requiring high blocking voltages and substantial current handling capabilities. Ensure the cooling system design accommodates the specified thermal resistances and that the operating temperature range remains within -40°C to +125°C for reliable performance under switching conditions.
Part Context
This component belongs to the FZ series of IGBT modules manufactured by Infineon Technologies. It utilizes Trenchstop technology optimized for inverter configurations. The module is designed for robust industrial applications where high reliability and efficient thermal dissipation are critical requirements.
Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains equivalent voltage ratings, current capacities, and package dimensions to guarantee compatibility with existing mounting and cooling infrastructure.
FAQ
What is the maximum short-circuit current the module can withstand?
The module can withstand a short-circuit current of 4000 A for a duration of up to 10 µs at a junction temperature of 125°C.
What materials are used for the module's baseplate and internal isolation?
The module utilizes an AlSiC baseplate and AlN (Aluminum Nitride) for internal basic insulation.
What is the isolation test voltage rating for this module?
The isolation test voltage is rated at 6.0 kV RMS at 50 Hz for one minute.
